PART |
Description |
Maker |
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC 8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200 8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
M464S6554BTS-CL7A M464S3354BTS M464S3354BTS-C7A M4 |
SDRAM Unbuffered SODIMM 内存缓冲SODIMM SDRAM Unbuffered SODIMM 内存缓冲的SODIMM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HB52F328DC-75BL |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 133 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC133 SDRAM x64 SDRAM Module X64的内存模
|
Elpida Memory Vishay Intertechnology, Inc.
|
M485L1624FT0-CA2 M470L3224FT0-CB0 M470L3224FT0-CB3 |
DDR SDRAM SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M464S3323BN0-C1L_L1L M464S3323BN0 M464S3323BN0-C1H |
144pin SDRAM SODIMM
|
SAMSUNG[Samsung semiconductor]
|
P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA Personal protection, Spectacles; RoHS Compliant: NA Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HMT112S6TFR8A-G7 HMT125S6TFR8A-G7 HMT112S6TFR8A-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC 64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module 32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块) x72 SDRAM Module x72内存模块 32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块)
|
IBM Microeletronics DB Lectro, Inc. International Business Machines, Corp.
|